[13a-A403-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

[13a-A403-3] Structural properties of generation sources of dislocations in polycrystalline Si ingots

〇Yutaka Ohno¹, Kazuya Tajima², Kentaro Kutsukake³, Noritaka Usami² (1.IMR, Tohoku Univ., 2.GSE, Nagoya Univ., 3.RIKEN)

Keywords:Si solar cells, Dislocation clusters

Many dislocation clusters acting as recombination centers are frequently generated during the growth of multicrystalline silicon (mc-Si), and they degrade the electric properties around them, which is much inferior to that in monocrystalline Si solar cells. One important issue to fabricate high quality mc-Si solar cells is, therefore, to control the generation of dislocation clusters during the crystal growth. It is proposed that some triple junctions of GBs are related to the dislocation generation. We have therefore examined the triple junctions to discuss the mechanism of the generation of dislocation clusters in terms of the nanoscopic structural properties of dislocations and grain boundaries. They would be generated accompanied with the movement of the triple junctions. They propagate towards different directions, forming dislocation clusters involving small angle tilt boundaries and dislocation networks. The mechanism of their generation and propagation will be discussed.