[13a-A403-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

[13a-A403-2] Operand observation of Fe impurities in mc-Si solar cell under external voltages

〇(M1)Masashi Kobayashi¹, Keiko Ogai², Koich Moriguchi², Yu Masuda², Yutaka Yoshida¹ (1.Shizuoka Insti. of Sci. and Tech., 2.APCO. Ltd.)

Keywords:iron impurity, Mossbauer Spectroscopy, Mapping technique

We apply the Mössbauer Spectroscopic Microscope for operand observation of Fe impurities in an mc-Si solar cell under external voltage between -5 and +0.9Volt, and observe the diffusion and the carrier trapping processes of Fe impurities in the solar cell. Our system can measure simultaneously Fe impurities in n-region as well as p-region by counting emitted electrons and transmitted g-rays. After applying a reverse bias of -5Volt, we observe Fe diffusion from n- to p-region, which is accompanied with carrier trappings, while after forward bias, the opposite processes are observed.