[13a-A403-1~9] 16.3 シリコン系太陽電池

▲ [13a-A403-8] Development of Double-sided TOPCon Solar Cells on Textured Silicon Wafer using ALD-SiO_x

〇(PC)Mickael Lozach¹、Shota Nunomura¹、Koji Matsubara¹ (1.National Institute of Advanced Industrial Science and Technology (AIST))

キーワード：Passivated contact, Polycrystalline silicone, Atomic layer deposition

Double-sided, front and rear, thin oxide passivated contact (TOPCon) solar cells are developed on textured silicon wafers. The double-sided TOPCon structure is composed of (p) poly-Si/SiO_x/(n) c-Si/SiO_x/(n) poly-Si, where the ultrathin oxide (SiO_x), about 0.6 ± 0.1 nm, is deposited by ALD. A photoconversion efficiency (PCE) of 18.8 % is obtained with the short-circuit current measured above 39 mA/cm² for a front Ag grid structure. The performances are successfully improved by controlling the boron and hydrogen diffusion profiles near the p-side SiO_x/c-Si.