The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[13a-B401-1~10] 13.7 Compound and power electron devices and process technology

Fri. Mar 13, 2020 9:00 AM - 11:45 AM B401 (2-401)

Kozo Makiyama(Fujitsu Lab.)

11:30 AM - 11:45 AM

[13a-B401-10] Evolution of defect in Mg ions-implanted GaN upon high temperature and ultrahigh N2 pressure annealing: Transmission electron microscopy analysis

〇(B)Takuya Nakashima1, Hideki Sakurai1,2,3, Sigeo Arai2, Kenji Iwata1, Tetsuo Narita4, Keita Kataoka4, Michal Bockowski2,5, Masahiro Nagao2, Jun Suda1, Tetsu Kachi2, Nobuyuki Ikarashi2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.ULVAC ISET, 4.Toyota Central R&D Labs., 5.Unipress)

Keywords:electron microscope, GaN