[13a-D305-1~10] 9.2 Nanoparticles, Nanowires and Nanosheets

[13a-D305-1] Electrical Properties of n-Ge/p-Ge(100) Vertical Diodes Formed by MBE and RIE

〇(M1)Rahmat Hadi Saputro^1,2, Ryo Matsumura², Naoki Fukata^1,2 (1.Univ. of Tsukuba, 2.NIMS)

Keywords:Germanium, pn-junctions, MBE

For the development of next-generation transistor, our research group has realized a vertical nanowire formation technology using RIE method. In order to apply this method to vertical Ge nanowire transistors in the future, it is necessary to form vertical junctions. We have evaluated the electrical characteristics of Ge pillar structure with a vertical pn junction formed by MBE and RIE methods.