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[13a-D419-5] Dominant factors limiting carrier transport of ultra thin W-doped In2O3 films
Keywords:Indium oxide, Ultrathin films, Electrical properties
In2O3 films has been mostly applied to transparent conducting films. However, its transport properties within ultrathin region have not fully investigated. In this study, we discussed the dependencies of the thickness and surface/interface roughness on its transport properties for ultrathin W-doped In2O3 (IWO) films, in terms of classical size effects based on mean free path of carriers. These IWO films were grown by using reactive plasma deposition and were subsequently solid-state-crystallized. We found that diffuse scattering on its surface or interface became dominant at the thickness less than 20 nm. Moreover, we also found that the solid-state crystallization reduces the surface roughness and the corresponding diffuse scattering, which results in a high Hall mobility for these ultrathin IWO films.