Resistance change behavior under voltage pulses at RESET process of Ti/HfO<sub>2</sub>/Au-ReRAM

Presentation information

Poster presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

Fri. Mar 13, 2020 9:30 AM - 11:30 AM PA3 (PA)

9:30 AM - 11:30 AM

〇Masahiro Morimoto¹, Rintaro Hatanaka¹, Tomotaka Sogawa¹, Tomohiro Shimizu¹, Takeshi Ito¹, Shoso Shingubara¹ (1.Kansai Univ.)

Keywords:Restive Random Access memory, Neuromorphic synaptic device, oxide film