[13a-PA5-1~9] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[13a-PA5-8] Analysis of resistance switching characteristics of CaF₂/Si/CaF₂ quantum-well structures

〇(M1)Takumi Kaneko¹, Kumagai Yoshiro¹, Hirose Kodai¹, Tonegawa Hiroki¹, Mikami Kizashi¹, Tomizawa kanta¹, Satou Honami¹, Watanabe Masahiro¹ (1.Tokyo Institute of Technology)

Keywords:semiconductor, quantum well, memory

A resistive switching memory using a CaF₂/Si/CaF₂ resonant tunneling quantum well structure has been proposed and demonstrated for some time, but recent research results show that charges are trapped in defect levels in the well layer i-Si. It was suggested that the memory operation could be realized without using the second barrier layer. In this study, the operating principle of the device was theoretically analyzed using the model proposed in this study, and the current-voltage characteristics and the ON / OFF ratio of the device were estimated.