[13a-PA6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[13a-PA6-11] Mapping of Schottky contacts on p-4H-SiC wafers using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Fatin Nabilah¹, Roy Matsuda¹, Masashi Kato² (1.Univ. of Fukui, 2.Nagoya Inst. of Tech.)

Keywords:SiC, Schottky contact, scanning internal photoemission microscopy

We have conducted mapping of Ni/p-4H-SiC schottky contacts by using scanning internal photoemission microscopy. We found that the metal/SiC interface is not uniform in the mapping with a visible laser. Onthe ther hand, uniform signal distribution was obtained from the deplesion region with a near-UV laser.