[13a-PA6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

△ [13a-PA6-3] Reaction Pathway Analysis for Contraction or Expansion of Basal Plane Partial Dislocations in 4H-SiC

〇Atsuo Hirano¹, Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹ (1.Univ. of Tokyo)

Keywords:dislocation, 4H-SiC, reaction pathway analysis

BPDs in 4H-SiC are converted into TEDs in order to reduce BPDs (BPD-TED conversion). In this work, we focused on the process of contraction of BPD partial dislocations, and investigated the influence of surface or surface morphology on this conversion. As a result of the reaction pathway analysis, in the vicinity of the surface, it was found that the mobility of C core partial dislocations is higher than that of Si core, and contractions of partial dislocations are easily occurred.