[13a-PA6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

△ [13a-PA6-4] Modeling of the effect of mechanical stress on the bipolar degradation of 4H-SiC

〇Hiroki Sakakima¹, Akihiro Goryu², Akira Kano², Kenji Hirohata², Asuka Hatano¹, Satoshi Izumi¹ (1.Univ. of Tokyo, 2.Toshiba R&D Center)

Keywords:4H-SiC, bipolar degradation, stacking fault

A model based on QWA (Quantum well action) has been proposed to interpret the propagation of stacking faults that cause bipolar degradation of 4H-SiC power devices. Using this model, the expansion and contraction of stacking faults can be determined based on the magnitude relationship of the stacking fault energy, energy lowering by QWA, and the resolved shear stress. We focused on the stresses, which had not been well studied so far, and modeled the effect of resolved shear stress on the critical minority carrier density, which is the criterion for stacking fault expansion.