[13a-PA6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[13a-PA6-5] Numerical study on relationship between spatial scale of interface defect distribution and field-effect mobility of SiC MOSFET

〇Kohei Yamasue¹, Yasuo Cho¹ (1.Tohoku Univ.)

Keywords:SiC, SiO2/SiC, local DLTS

It has recently been shown that interface defect density (D_it) at the SiO₂/SiC interfaces have non-uniform spatial distribution, which can cause the decrease of field effect mobility in SiC MOSFETs. In this presentation, we discuss the relationship between the decrease in the field effect mobility and the spatial scale in the non-uniform Dit distributions using device simulation.