Influence of Interface Traps on Split <em>C</em>-<em>V</em> Characteristics of 4H-SiC MOSFETs

Gyozen Sai; Dai Okamoto; Noriyuki Iwamoro; Hiroshi Yano

Presentation information

Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[13a-PA6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Mar 13, 2020 9:30 AM - 11:30 AM PA6 (PA)

9:30 AM - 11:30 AM

▲ [13a-PA6-6] Influence of Interface Traps on Split C-V Characteristics of 4H-SiC MOSFETs

〇(D)Gyozen Sai¹, Dai Okamoto¹, Noriyuki Iwamoro¹, Hiroshi Yano¹ (1.Univ. Tsukuba)

Keywords:SiC, C(G)-V curve, MOSFET

Split C-V technique was applied on n-channel 4H-SiC MOSFETs to characterize interface properties of SiO₂/SiC structures. The mechanism of the “ledge” and peak shapes in the C_GC-V and G_GC-V curves were explained by interface traps.