[13a-PA6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[13a-PA6-7] Effect of Plasma Nitridationit on Chemical Bonding State of 4H-SiC Surface

Jota Nishino¹, 〇Hiroshi Nohira¹ (1.Tokyo City Univ.)

Keywords:AR-XPS, Plasma nitridation

A 4H-SiC (0001) (Si surface) substrate was subjected to a radical nitridation treatment at a substrate temperature of 400 °C for 5 to 15 minutes. The samples were examined for surface and interface changes using angle resolved photoelectron spectroscopy. As a result, photoelectron arising from Si atom and C atom combined with N atom were observed. Detailed analysis results will be reported on the day.