[13a-PA6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[13a-PA6-8] Evaluation of deep interface states for SiC-MOS capacitor by photo-assisted CV method

〇Hideaki Matsuyama¹, Yutaka Terao¹, Katsunori Ueno¹, Shinya Takashima¹ (1.Fuji Electric)

Keywords:SiC-MOS, deep interface state density, photo-assisted CV measurement

The interface state density of SiC-MOS capacitors was evaluated by photo-assisted CV method. The deep interface state density was obtained by photo-assisted CV measurement with continuously changing light wavelength, and shallow interface state density was obtained by Terman method. As a result, it was possible to derive the distribution of the interface state density over the entire region within the band gap.