9:30 AM - 11:30 AM
[13a-PA6-5] Numerical study on relationship between spatial scale of interface defect distribution and field-effect mobility of SiC MOSFET
Keywords:SiC, SiO2/SiC, local DLTS
It has recently been shown that interface defect density (Dit) at the SiO2/SiC interfaces have non-uniform spatial distribution, which can cause the decrease of field effect mobility in SiC MOSFETs. In this presentation, we discuss the relationship between the decrease in the field effect mobility and the spatial scale in the non-uniform Dit distributions using device simulation.