9:30 AM - 11:30 AM
▲ [13a-PA6-6] Influence of Interface Traps on Split C-V Characteristics of 4H-SiC MOSFETs
Keywords:SiC, C(G)-V curve, MOSFET
Split C-V technique was applied on n-channel 4H-SiC MOSFETs to characterize interface properties of SiO2/SiC structures. The mechanism of the “ledge” and peak shapes in the CGC-V and GGC-V curves were explained by interface traps.