9:30 AM - 11:30 AM
[13a-PA6-7] Effect of Plasma Nitridationit on Chemical Bonding State of 4H-SiC Surface
Keywords:AR-XPS, Plasma nitridation
A 4H-SiC (0001) (Si surface) substrate was subjected to a radical nitridation treatment at a substrate temperature of 400 °C for 5 to 15 minutes. The samples were examined for surface and interface changes using angle resolved photoelectron spectroscopy. As a result, photoelectron arising from Si atom and C atom combined with N atom were observed. Detailed analysis results will be reported on the day.