[13p-A202-1~17] 13.9 Compound solar cells

[13p-A202-5] Development of InGaP/GaAs/InGaAsP 3-junction solar cell with Surface Activated Bonding

〇(M2)Takafumi Fukutani¹, Kentaroh Watanabe², Hassanet Sodabanlu², Yoshiaki Nakano^1,2, Masakazu Sugiyama^1,2 (1.Tokyo Univ Engineering., 2.Tokyo Univ RCAST)

Keywords:solar cell, multi-junction, surface activated bonding

Surface activated bonding is the useful method to fabricate high efficiency multi-junction solar cell. There are still a lot of unobvious points of the influence of the process with this method. This was why we fabricated InGaP/GaAs//InGaAsP 3-junction solar cell and adopted the structure which include a tunnel diode at the interface of surface activated bonding. We measured the I-V characteristic and quantum efficiency of the cell and confirmed that it operated as 3-junction solar cell.