The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-A302-1~10] 15.4 III-V-group nitride crystals

Fri. Mar 13, 2020 1:30 PM - 4:15 PM A302 (6-302)

Motoaki Iwaya(Meijo Univ.), Toshiki Hikosaka(Toshiba Corp.)

3:45 PM - 4:00 PM

[13p-A302-9] Analysis of Transmetalation between TMI and Metallic Ga during AlInN Growth by High-Resolution Mass Spectrometry

〇(M1)Donglin Wu1, Zheng Ye1, Shugo Nitta2, Yoshio Honda2, Markus Pristovsek2, Hiroshi Amano2,3,4,5 (1.Dept. of Electronics, Nagoya Univ, 2.Nagoya Univ. IMaSS, 3.NIMS, 4.Nagoya Univ. ARC, 5.Nagoya Univ. VBL)

Keywords:Metalorganic vapor phase epitaxy, Nitrides, Semiconducting III-V materials

AlInN is a promising material to replace AlGaN for high-frequency HEMT because of a higher bandgap, large spontaneous polarization, and the strain of AlInN can be adjusted to tensile or compressive. However unintentional gallium (Ga) incorporation is a serious problem for AlInN barrier growth when using close coupled showerhead MOVPE reactors, which results in loss of control on the alloy composition and lower reliability of devices[1][2]. It is supposed that a transmetalation reaction between tranfers methyl groups from (CH3)3In (TMIn) to metallic Ga deposited on the showerhead mobilises the Ga.We used a high-resolution time-of-flight mass spectrometry (infiTOF-UHV, MSI.TOKYO, Inc.) to investigate the transmetalation process.