3:45 PM - 4:00 PM
▲ [13p-A302-9] Analysis of Transmetalation between TMI and Metallic Ga during AlInN Growth by High-Resolution Mass Spectrometry
Keywords:Metalorganic vapor phase epitaxy, Nitrides, Semiconducting III-V materials
AlInN is a promising material to replace AlGaN for high-frequency HEMT because of a higher bandgap, large spontaneous polarization, and the strain of AlInN can be adjusted to tensile or compressive. However unintentional gallium (Ga) incorporation is a serious problem for AlInN barrier growth when using close coupled showerhead MOVPE reactors, which results in loss of control on the alloy composition and lower reliability of devices[1][2]. It is supposed that a transmetalation reaction between tranfers methyl groups from (CH3)3In (TMIn) to metallic Ga deposited on the showerhead mobilises the Ga.We used a high-resolution time-of-flight mass spectrometry (infiTOF-UHV, MSI.TOKYO, Inc.) to investigate the transmetalation process.