[13p-A302-1~10] 15.4 III-V族窒化物結晶

▲ [13p-A302-9] Analysis of Transmetalation between TMI and Metallic Ga during AlInN Growth by High-Resolution Mass Spectrometry

〇(M1)Donglin Wu¹、Zheng Ye¹、Shugo Nitta²、Yoshio Honda²、Markus Pristovsek²、Hiroshi Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ、2.Nagoya Univ. IMaSS、3.NIMS、4.Nagoya Univ. ARC、5.Nagoya Univ. VBL)

キーワード：Metalorganic vapor phase epitaxy, Nitrides, Semiconducting III-V materials

AlInN is a promising material to replace AlGaN for high-frequency HEMT because of a higher bandgap, large spontaneous polarization, and the strain of AlInN can be adjusted to tensile or compressive. However unintentional gallium (Ga) incorporation is a serious problem for AlInN barrier growth when using close coupled showerhead MOVPE reactors, which results in loss of control on the alloy composition and lower reliability of devices[1][2]. It is supposed that a transmetalation reaction between tranfers methyl groups from (CH3)₃In (TMIn) to metallic Ga deposited on the showerhead mobilises the Ga.We used a high-resolution time-of-flight mass spectrometry (infiTOF-UHV, MSI.TOKYO, Inc.) to investigate the transmetalation process.