[13p-A305-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[13p-A305-5] [The 11th Silicon Technology Division Award Speech] Bilayer tunnel field effect transistor with oxide-/group-IV semiconductors

〇Kimihiko Kato^1,2, Hiroaki Matsui¹, Hitoshi Tabata¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo, 2.AIST)

Keywords:TFET, oxide semiconductor, group-IV semiconductor

Tunnel field effect transistor (TFET) is one of attractive electrical devices as a steep-slope transistor, which exceed the physical limit of conventional MOSFET. In order to realize high-performance TFET with high compatibility with Si CMOS platform, we are proposing the bilayer TFET structure by utilizing an n-type oxide semiconductor channel and a p-type group-IV semiconductor source. In this study, we will report our achievement about first experimental demonstration of the proposed bilayer TFET structure with the ZnO/Si and ZnO/Ge hetero junction.