[13p-A305-1~13] 13.5 デバイス／配線／集積化技術

▲ [13p-A305-8] First demonstration of (111) Ge-on-insulator n-channel MOSFET fabricated by smart-cut technology

〇(D)CheolMin Lim¹、Ziqiang Zhao¹、Kei Sumita¹、Kasidit Toprasertpong¹、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.Tokyo Univ.)

キーワード：Ge-on-insulator, Smart-cut, (111)

A high-performance Ge-on-insulator (GOI) n-channel MOSFET (nMOSFET) is required to establish the Ge CMOS technology. Here, (111) surface orientation has high potential for Ge nMOSFETs because of the low effective mass, indicating that (111) GOI nMOSFETs are promising. However, there is no report on the operation of (111) GOI nMOSFETs until now, because of the difficulty in preparing (111) GOI substrates. Recently, we have reported the successful fabrication of (111) GOI wafers by the smart-cut technology. In this work, we demonstrate the operation of (111) GOI nMOSFETs using the GOI substrates fabricated by the smart-cut process. Here, the solid-state diffusion process for n+/p junction formation in GOI is examined and optimized.