[13p-B407-1~10] 11.4 Analog applications and their related technologies

[13p-B407-9] Preparation of Nb₃Ge superconducting thin films by radiation heating

〇Akira Kawakami¹, Hirotaka Terai¹, Yoshinori Uzawa² (1.NICT, 2.NAOJ)

Keywords:Nb3Ge, SIS mixer, thin film

To realize a 1.5 THz SIS mixer, a Nb₃Ge thin film deposition method was studied. A multi-source co-sputtering method was adopted. For the deposition of Nb₃Ge film on a quartz substrate, radiation heating was attempted as substrate heating method. First, a carbon / Nb bilayer film was formed as a heat absorbing film on the back surface of the substrate, placed with a gap of about 1 mm from the heater surface, and heated by heat radiation. Crystallization of the prepared Nb₃Ge thin film was confirmed by XRD analysis, and the superconducting transition temperature was about 13.5 K.