[13p-B408-1~16] 11.1 Fundamental properties

[13p-B408-10] Development of diamond anvil cell modified for use as field-effect device II

〇Shintaro Adachi¹, Ryo Matsumoto^1,2, Sayaka Yamamoto^1,2, Takafumi D. Yamamoto¹, Kensei Terashima¹, Yoshito Saito^1,2, Miren Esparza Echevarria¹, Pedro Baptista de Castro^1,2, Peng Song^1,2, Hiroyuki Takeya¹, Yoshihiko Takano^1,2 (1.MANA, NIMS, 2.Tsukuba Univ.)

Keywords:field-effect, electric double layer, high pressure

The application of high pressure enables us to reach unknown phenomena such as high-transition temperature superconductivity (HTS). The recent discovery of HTS in hydrides using diamond anvil cell (DAC) is a typical example of research under high pressure. Also, many interesting phenomena have been recently observed due to the induction of carriers into materials, by using an electric double-layer transistor (EDLT) structure. When an EDL formed on a sample interface it induces a large number of carriers around the sample surface. The EDLT structure and the DAC are predominant tools for tuning of the physical properties in materials. The purpose of this study is to fabricate an EDLT structure in DAC to explore the new physical phenomenon. We recently succeeded in the observation of the field-effect in a film sample under high pressure using this EDLT-DAC. In this conference, we will report experimental results using EDLT-DAC and details.