[13p-B408-1~16] 11.1 Fundamental properties

[13p-B408-11] Chemical pressure effect of electron-doped FeSe with electric double-layer transistors

Naoki Shikama¹, Yuki Sakishita¹, 〇Fuyuki Nabeshima¹, Kazunori Ueno¹, Atsutaka Maeda¹ (1.Univ. of Tokyo)

Keywords:iron-based superconductor, thin film, electric double-layer transistor

Superconducting transition temperature T_c of FeSe increases from 9 K up to approximately 40 K by electron doping. In order to gain a new insight into the superconducting mechanism of this high T_c superconductivity in electron doped FeSe, we fabricated electric double-layer transistors with FeSe films chemically substituted with isovalent elements S and Te, and investigated chemical pressure effects in electron-doped FeSe. We found that T_c decreases by both negative and positive chemical pressure for electron-doped FeSe.