The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[13p-D411-1~16] 6.3 Oxide electronics

Fri. Mar 13, 2020 1:45 PM - 6:15 PM D411 (11-411)

Yusuke Kozuka(NIMS), Tomoteru Fukumura(Tohoku Univ.)

1:45 PM - 2:00 PM

[13p-D411-1] [Young Scientist Presentation Award Speech] Fast H conduction and diffusion mechanism in lanthanum oxyhydride LaH3−2xOx

Keiga Fukui1, Soshi Iimura1, Tomofumi Tada1, Satoru Fujitsu1, Masato Sasase1, Hiromu Tamatsukuri2, Takashi Honda2, Kazutaka Ikeda2, Toshiya Otomo2, Hideo Hosono1 (1.Tokyo Tech., 2.KEK)

Keywords:ionic conduction, hydride ion, oxyhydride

H conduction in lanthanum oxyhydride was investigated. Lanthanum oxyhydride (LaH3−2xOx) with x = 0.25 shows high H conductivity of 2.6 × 10−2 S cm−1 at 340°C. In molecular dynamics simulations, characteristic phenomenon that is a cooperative migration of H is observed. This indicates that H conduction in lanthanum oxyhydride originates from the interstitialcy diffusion.