The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[13p-D411-1~16] 6.3 Oxide electronics

Fri. Mar 13, 2020 1:45 PM - 6:15 PM D411 (11-411)

Yusuke Kozuka(NIMS), Tomoteru Fukumura(Tohoku Univ.)

4:30 PM - 4:45 PM

[13p-D411-11] Fabrication and transport properties of SrWO3-xNx thin films

Takahiro Maruyama1, Akira Chikamatsu1, Yasushi Hirose1, Tukasa Katayama1, Tetsuya Hasegawa1 (1.Univ. of Tokyo)

Keywords:oxynitride, thin film, transport properties

A transition metal oxynitride exhibits various electron transport properties. For example, amorphous ZnOxNy having high electron mobility and EuNbO2N shows a huge negative magnetoresistance. Most oxynitrides show semiconducting properties in stoichiometric composition. SrWO2N has been reported as one of the few examples showing metallic conduction. In this study, we fabricated SrWO3-xNx single crystal thin films and investigated their electron transport properties.