[13p-D411-1~16] 6.3 Oxide electronics

△ [13p-D411-12] Current–Voltage Measurements for Ca₂RuO₄ Thin Films with Current-Driven Metal-Insulator Transition

〇Keiji Tsubaki¹, Atsushi Tsurumaki-Fukuchi¹, Tenki Ishida¹, Masashi Arita¹, Takayoshi Katase², Toshio Kamiya², Yasuo Takahashi¹ (1.IST, Hokkaido Univ., 2.MSL, Tokyo Tech.)

Keywords:metal-insulator transition, ruthenium oxide, current-driven phase transition

In Mott insulator Ca₂RuO₄(CRO), recent works have experimentally demonstrated that the metal-insulator transition can also be induced by electric stimuli such as voltages/currents. It has attracted great attention to study new physical properties in CRO by using electric field/current as the order parameter. However, for CRO, growth of the epitaxial thin films is known to be especially difficult due to the easy formation of Ru deficiencies in the growth processes. We developed single-crystalline thin films of CRO by solid-phase epitaxy, and observed an electrically-tunable resistive transitions in the films. By using this thin film, it become possible to explore new physical properties induced by electric field/current and fabricate device structures. In this study, to evaluate the applicability of the current-induced transition to a Mott-transition type resistive change device, the current-voltage characteristics were investigated in detail.