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[13p-D419-16] Ga2O3 MOSFET with Maximum Oscillation Frequency of 27 GHz
Keywords:Ga2O3, RF FET
Ga2O3 has been theoretically predicted to have a very large breakdown field and a relatively high electron saturation velocity. Therefore, the Ga2O3 FETs are expected to be applied not only to high-voltage switching devices but also to RF devices. In this study, in order to suppress the short channel effect that occurs in sub-μm gate scaling commonly used for RF FETs, sub-μm gate Ga2O3 MOSFETs were fabricated with shallow and high-concentration Si ion-implantation channel doping, and the aspect ratio of a gate length/channel layer thickness was maintained at a high value. As a result of DC and RF device characterizations of the fabricated MOSFETs, we succeeded in recording the maximum value of the maximum oscillation frequency (fmax) for Ga2O3 FETs.