5:45 PM - 6:00 PM
[13p-D419-15] High Temperature Operation of Normally-off β-Ga2O3 MOSFET
Keywords:beta-Ga2O3, MOSFET, Normally-off
β-Ga2O3 has wide bandgap of 4.5eV. Near future, it is expected that β-Ga2O3 will be candidate of semiconductor devices with high temperatures operation of 250℃ or higher which is difficult by Si. This time, we will show normally-off β-Ga2O3 MOSFET with high temperature operation.