5:30 PM - 5:45 PM
[13p-D419-14] High breakdown voltage MOS capacitor fabricated on the β-Ga2O3 epitaxial layer with low donor concentration
Keywords:gallium oxide, MOS capacitance, HVPE
We are studying a low-concentration and thick-film drift layer to realize a vertical trench MOS transistor with a breakdown voltage of 10 kV class and low on-resistance. This time, as a basic experiment, we investigate the dependence of the breakdown voltage on the donor concentration in the planar MOS structure that simulates the bottom of the trench, and report that the expected improvement in the breakdown voltage was observed by lowering the donor concentration.