[13p-PA5-1~14] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[13p-PA5-14] Low temperature photoluminescence of GaAs and InGaP grown at high speed growth rate

〇Akinori Ubukata¹, Hassanet Sodabanlu³, Taketo Aihara², Ryuji Oshima², Yasushi Shoji², Takeyoshi Sugaya², Syuichi Koseki¹, Kentaro Watanabe³, Yoshiaki Nakano⁴, Masakazu Sugiyama³ (1.Taiyo Nippon Sanso Corp., 2.AIST, 3.RCAST, The Univ. of Tokyo, 4.School of Eng., The Univ. of Tokyo)

Keywords:HVPE, photoluminescence, High speed growth rate

It is well known that III-V compound semiconductor photovoltaic such as GaAs or InGaP have high power conversion efficiency, however the application is limityed to the space only because of high production cost. We are trying to reduce this cost by improvement of throughput and conversion to HVPE growth method to reduce material cost. As an expected issue, GaAs/InGaP grown at high grwth rate by MOCVD contains much carbon impurity due to metalorgaic material, and then InGaP grown by HVPE contains n-type impurity generated from HCl and/or damaged reactor materials. In this presentation, we report results of low-temperature photoluminescence characterization of GaAs and InGaP grown by both of MOCVD and HVPE. Fow InGaP by HVPE, clear and strong exciton emissions were observed, which indicates crystalline quality keeps good with HVPE growth method.