[13p-PA5-1~14] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[13p-PA5-9] Fabrication of Mid-IR LED using InAs/InGaAsSb Type-Ⅱ SLSs on InP Substrates (2)

〇(B)Naoto Iijima¹, Ko Uno¹, Katsuyoshi Sakamoto¹, Kouichi Yamaguchi¹ (1.Univ. Electro-Comm.)

Keywords:semiconductor, type-II super-lattice structure, mid-IR emission