The 67th JSAP Spring Meeting 2020

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[13p-PA9-1~25] 13.7 Compound and power electron devices and process technology

Fri. Mar 13, 2020 4:00 PM - 6:00 PM PA9 (PA)

4:00 PM - 6:00 PM

[13p-PA9-1] PMA effects on ALD-Al2O3/GaN interface properties

〇(M1)Yuhei Morishita1, Tamotsu Hashizume1 (1.Research Center For Integrated Quantum Electronics)

Keywords:semiconductor, gallium nitride, interface properties of metal oxide semiconductor