[13p-PA9-1~25] 13.7 Compound and power electron devices and process technology

[13p-PA9-2] Characterization of shallow levels in MOVPE p-GaN annealed at high temperatures

〇(M1)Hikaru Yoshida¹, Tiyo Terabe¹, Yuki Yasui¹, Wakana Takeuchi¹, Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita^2,3, Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)

Keywords:p-GaN

We studied the effect of activation annealing temperature on Mg-doped p-GaN grown by MOVPE.
The characterization of the p-GaN was performed by Admittance measurement. The activation annealing was performed at 750, 850, and 950°C for 5min. The trap labeled A (E_v+0.16 eV) was observed only in p-GaN annealed at 950°C with the high trap concentration of 9.3x10¹⁵ cm^-3. The trap labeled B (E_v+0.34~0.35 eV) was observed in all p-GaN samples, and its concentrations were 2.2~3.1x10¹⁵ cm^-3.