The 67th JSAP Spring Meeting 2020

Presentation information

Poster presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[13p-PA9-1~25] 13.7 Compound and power electron devices and process technology

Fri. Mar 13, 2020 4:00 PM - 6:00 PM PA9 (PA)

4:00 PM - 6:00 PM

[13p-PA9-3] Temperature Measurement of GaN with Radiation Thermometer during Atmospheric Pressure Thermal-Plasma-Jet annealing

Hiroaki Hanafusa1, Seiichiro Higashi1 (1.Hiroshima Univ.)

Keywords:Atmospheric Pressure Thermal-Plasma-Jet annealing, Gallium Nitrite, Rapid thermal annealing