[13p-PA9-1~25] 13.7 Compound and power electron devices and process technology

[13p-PA9-10] Fabrication of AlN structures on substrates using alkaline solutions for GaN growth

〇Masayuki Nakamura¹, Takayuki Kobayashi¹, Koichiro Yuki², Ryo Inomoto², Narihito Okada², Toshiaki Tatsuta¹, Kazuyuki Tadatomo², Shin-ichi Motoyama¹ (1.Samco Inc., 2.Yamaguchi univ.)

Keywords:GaN, PSS, Atomic layer deposition

PSS(Patterned Sapphire Substrates) is often used in GaN-LED because it improves the external quantum efficiency and the crystal quality of GaN. However, fabrication of PSS needs a large quantity of energy and corrosive gas such as Cl2 because of the several µm dry etching of sapphire substrates. In this study, we fabricated the AlN structures similar to PSS by AlN sputtering and wet etching using the alkaline solution. We also confirmed that the flat GaN film grew on the AlN structures with ALD-AlN buffer layer.