[13p-PA9-1~25] 13.7 Compound and power electron devices and process technology

[13p-PA9-17] Ohmic characteristics to n-AlN using AlGaN contact layers varied degree of compositional graduation

〇Masanobu Hiroki¹, Kazuhide Kumakura¹ (1.NTT BRL)

Keywords:AlN

We obtained ohmic contact to n-type AlN using graded-AlGaN contact layer. In this study, we tried to improve ohmic characteristics by structural modification of the graded-AlGaN contact layer. As a result, current density was about 2 times larger than that for previous works. We also found the reduction in the effective contact resistivity from TLM measurements.