[13p-PA9-1~25] 13.7 Compound and power electron devices and process technology

[13p-PA9-19] Evaluation of Trap Characteristics in High-frequency AlGaN/GaN HEMTs with High-resistivity GaN Buffer Layer by Low-frequency Y-parameter Measurements

〇Takahiro Yamada¹, Yumiko Kobayashi¹, Hisashi Saito¹, Tatsuro Watahiki¹, Eiji Yagyu¹, Mikio Yamamuka¹ (1.Mitsubishi Electric Corp.)

Keywords:GaN, HEMT, Trap