The 67th JSAP Spring Meeting 2020

Presentation information

Poster presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[13p-PA9-1~25] 13.7 Compound and power electron devices and process technology

Fri. Mar 13, 2020 4:00 PM - 6:00 PM PA9 (PA)

4:00 PM - 6:00 PM

[13p-PA9-21] Effective Schottky barrier height model for Ga- and N-polar GaN by polarization-induced charges with finite thickness

Tetsuya Suemitsu1, Isao Makabe2 (1.Tohoku Univ., 2.Sumitomo Electric)

Keywords:GaN, Schottky barrier, polarization

Ga- and N-polar GaN Schottky diodes are prepared and their barrier heights are characterized. In both current-voltage and capacitance-voltage measurements, the N-polar GaN exhibits smaller barrier height than the Ga-polar GaN by 0.21 V. The difference in the barrier height is modeled by the polarization-induced surface charges with a few angstroms of thickness under the surface. The experimentally obtained difference of the barrier height is explained by assuming the polarization-charged layer thickness of 5 Å, the thickness corresponding to the lattice constant of wurtzite GaN along the c-axis.