[13p-PA9-1~25] 13.7 Compound and power electron devices and process technology

[13p-PA9-22] High breakdown voltage performance of AlGaAs/GaAs/AlGaAs heterojunction diode with the identical impurity concentration for electron and hole channel formation

〇(M1)Hiroaki Ogawa¹, Soichiro Kawata¹, Tomoyoshi Kushida², Naotaka Iwata¹ (1.Toyota Tech. Inst., 2.Toyota Motor Corp.)

Keywords:superjunction, high breakdown voltage, GaAs

We previously reported the breakdown voltage of 600V for AlGaAs/GaAs/AlGaAs heterostructure superjunction diodes with a pair of electron and hole channels. However, this voltage was lower than that is derived from the breakdown electric field of GaAs. In this study, acceptor concentrations were examined from 0.8 to 1.0×10¹² cm^-2 with a fixed donor concentration at 1.1×10¹² cm^-2 on taking account of a residual acceptor concentration of 10¹⁵ cm^-3. The diode with the acceptor concentration of 0.9×10¹² cm^-2, where donors and acceptors were balanced, yielded a high breakdown voltage of 1200 V with a drift region length of 113 µm.