[13p-PB1-1~29] 15.4 III-V族窒化物結晶

▲ [13p-PB1-10] Investigation of GaN regrowth on InGaN/GaN Nanodisks Fabricated by Neutral Beam Etching

〇Kexiong Zhang¹、T. Takahashi¹、D. Ohori²、N. Kumagai¹、G. W. Cong¹、K. Endo¹、M. Shimizu^1,3、S. Samukawa²、X. L. Wang^1,3 (1.AIST、2.Tohoku Univ.、3.Nagoya Univ.)

キーワード：InGaN/GaN Nanodisk, Neutral Beam Etching