[13p-PB1-1~29] 15.4 III-V-group nitride crystals

[13p-PB1-16] Dislocation structure around Vickers indentations on HVPE-GaN

〇Yukari Ishikawa¹, Yoshihiro Sugawara¹, Daisaku Yokoe¹, Yong-Zhao Yao¹ (1.JFCC)

Keywords:GaN, dislocation, Vickers

We observed three-dimensional dislocation structure around Vickers indentations on HVPE-GaN by multi-photon PL and transmission electron microscopy in order to analyze the structure of process induced defect. Two types of dislocation loop structures were found under the rosette arm structure which has been reported. Dislocation structure was not varied with load but the size linearly increased with load.