16:00 〜 18:00
▲ [13p-PB1-22] Improvement of current injection efficiency in AlGaN-based deep-ultraviolet light-emitting diodes via strains
キーワード：DUV-LEDs, AlGaN, Current injection efficiency
AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) offer a compact, environment-friendly alternative to traditional mercury vapor lamps and bulbs as light sources. However, the power conversion efficiency of DUV-LEDs decreases rapidly as the emission wavelength decreases. The low current injection efficiency (CIE) is one factor that limits the efficiency of electrically-injected AlGaN-based DUV-LEDs. It is well known that the performance of the DUV-LEDs is sensitive to the strains in the epilayers. A number of researchers focused on strain effects on the radiative recombination efficiency due to the quantum-confined Stark effect (QCSE) of the quantum wells (QWs). The strain effects on the light extraction efficiency via the modulation of the photon polarization have also been investigated extensively. In this talk, we report the discovery of strain effects on the CIE in AlGaN-based DUV-LEDs.