[13p-PB1-1~29] 15.4 III-V-group nitride crystals

[13p-PB1-3] Study of surface contamination on single-crystalline GaN layer (Ⅲ)

〇Ai Mizuno¹, Naoki Fukuda¹, Masaki Iwamoto¹, Takuya Osada¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.School of Engineering, Tokyo Denki Univ.)

Keywords:GaN layer, XPS, Surface contamination

We have investigated the Si-based compounds contaminated on the surface GaN layers. According to our work, the buffered hydro fluoride (BHF) was very effective in order to remove the Si contamination. In this work, we investigated the residual of fluorine component in the GaN layer by BHF treatment.