The 67th JSAP Spring Meeting 2020

Presentation information

Poster presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-PB1-1~29] 15.4 III-V-group nitride crystals

Fri. Mar 13, 2020 4:00 PM - 6:00 PM PB1 (PB)

4:00 PM - 6:00 PM

[13p-PB1-8] Growth of N-polar InN by RF-MBE on N-polar AlN Template

Anri Fukuda1, Shinichiro Mori1, Yasushi Nanishi1, Araki Tsutomu1, Kanako Shojiki2, Hideto Miyake2,3 (1.Ritsumeikan Univ., 2.Grad. School of Eng, Mie Univ., 3.Grad School of RIS, Mie Univ.)


InN has the smallest effective mass and the highest electron drift velocity. Therefore, InN is expected to be the high-speed and high-frequency electron devices.
However, it is difficult to grow at high temperature due to high equilibrium vapor pressure of nitrogen molecules.
On the other hand, it has been reported that in N-polar InN growth temperature about 100 ° C higher than In-polar InN.
In this presentation, we will be discussed the crystal properties and Electrical characteristics of N-polar InN /N-polar AlN.