4:00 PM - 6:00 PM
[13p-PB1-8] Growth of N-polar InN by RF-MBE on N-polar AlN Template
However, it is difficult to grow at high temperature due to high equilibrium vapor pressure of nitrogen molecules.
On the other hand, it has been reported that in N-polar InN growth temperature about 100 ° C higher than In-polar InN.
In this presentation, we will be discussed the crystal properties and Electrical characteristics of N-polar InN /N-polar AlN.