[14a-A202-1~8] 13.2 Exploratory Materials, Physical Properties, Devices

[14a-A202-4] Impurity site in the doped Mg₂Si

〇Motoharu Imai¹, Yoshitaka Matsushita¹, Haruhiko Udono² (1.NIMS, 2.Ibaraki Univ.)

Keywords:Mg2Si, dopant, single-crystal X-ray diffractometry

The crystallographic site occupied by the dopants in doped Mg₂Si has been investigated by single-crystal X-ray diffractometry.