Oral presentation

[14a-A202-1~8] 13.2 Exploratory Materials, Physical Properties, Devices

Sat. Mar 14, 2020 9:00 AM - 11:00 AM A202 (6-202)

Kosuke Hara(Univ. of Yamanashi)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[14a-A202-1] Evaluation of crystalline quality of Mg₂Si using high resolution XRD

〇Ryohei Masubuchi¹, Yutaro Fuse¹, Yoshiaki Hara², Haruhiko Udono¹ (1.Ibaraki Univ., 2.Ibaraki Tec College)

9:15 AM - 9:30 AM

[14a-A202-2] Carrier lifetime of Mg₂Si pn-junction diode measured by OCVD method

〇Haruhiko Udono¹, Rio Okada¹, Fumiya Takahashi¹ (1.Ibaraki Univ.)

9:30 AM - 9:45 AM

[14a-A202-3] Synthesis of crack-free Mg₂Si crystal by thermal treatment under inert gas atmosphere

Issei Horiba¹, Kazuhiro Gotoh¹, 〇Yasuyoshi Kurokawa¹, Takashi Itoh¹, Noritaka Usami¹ (1.Nagoya Univ.)

9:45 AM - 10:00 AM

[14a-A202-4] Impurity site in the doped Mg₂Si

〇Motoharu Imai¹, Yoshitaka Matsushita¹, Haruhiko Udono² (1.NIMS, 2.Ibaraki Univ.)

10:00 AM - 10:15 AM

△ [14a-A202-5] Relationship between electronic states and thermoelectric characteristics in B20-type CoSi film /Si

〇Takafumi Ishibe¹, Takahiro Hinakawa¹, Shunya Sakane¹, Kazunori Sato¹, Eiichi Kobayashi², Takeshi Fujita³, Yoshiaki Nakamura¹ (1.Osaka Univ., 2.Kyushu synchrotron light research center, 3.Kochi Univ. Technol.)

10:15 AM - 10:30 AM

[14a-A202-6] Growth of Sb-doped n-BaSi₂ films on CaF₂ substrates for thermoelectric characterizations

〇Ryuichi Yoshida¹, Mikie Tsuji¹, Sho Aonuki¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

10:30 AM - 10:45 AM

[14a-A202-7] Investigation of RF sputtering conditions for high-photoresponsivity BaSi₂ films

〇Taira Nemoto¹, Takuma Sato¹, Masami Mesuda², Hideto Kuramochi², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Tosoh Corp.)

10:45 AM - 11:00 AM

[14a-A202-8] Growth and characterization of BaSi₂ films sputtered on conductive films

〇Ryota Koitabashi¹, Taira Nemoto¹, Masami Mesuda², Hideto Kuramochi², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Tosoh Corp.)

Oral presentation

[15a-A202-1~8] 13.2 Exploratory Materials, Physical Properties, Devices

Sun. Mar 15, 2020 9:00 AM - 11:00 AM A202 (6-202)

Yoshiaki Nakamura(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [15a-A202-1] Synthesis of MnSi_1.7/Si Nanosheet Bundles by MnCl₂/NH₄Cl treatment of CaSi₂ Powders

〇Shogo Ito¹, Yudai Nishikawa², Yushin Numazawa¹, Yosuke Shimura^1,2,3, Naohisa Takahashi⁴, Hirokazu Tatsuoka¹ (1.Grad. Sch. Integr. Sci. & Technol., Shizuoka Univ., 2.Fac. Eng., Shizuoka Univ., 3.Res. Inst. Electron., Shizuoka Univ., 4.Yamaha Advanced Material Research Gr., Yamaha Motor Co., Ltd.)

9:15 AM - 9:30 AM

△ [15a-A202-2] Synthesis of Mg₂Si Nanosheet Bundles by MgCl₂/Mg Vapor Treatment of CaSi₂ Powders

〇Tomoya Koga¹, Yushin Numazawa², Yosuke Shimura^1,2,3, Naohisa Takahashi⁴, Hirokazu Tatsuoka² (1.Fac. Eng.,Shizuoka Univ., 2.Grad. Sch. Integr. Sci. & Technol.,Shizuoka Univ., 3.Res. Inst. Electron., Shizuoka Univ., 4.Yamaha Advanced Material Research Gr., Yamaha Motor Co., Ltd.)

9:30 AM - 9:45 AM

[15a-A202-3] Thin film growth of CaSi₂ and CaGe₂ by close-spaced evaporation

〇Kosuke Hara¹, Shuhei Takizawa¹, Junji Yamanaka², Masashi Kurosawa^3,4, Keisuke Arimoto¹ (1.CCST, Univ. of Yamanashi, 2.CIA, Univ. of Yamanashi, 3.Grad. Sch. of Eng., Nagoya Univ., 4.IAR, Nagoya Univ.)

9:45 AM - 10:00 AM

[15a-A202-4] Synthesis of LiSi_1-xGe_x as a Novel Ternary Compound

〇Shogo Ikemoto¹, Yutaro Sugiura¹, Himanshu Jha¹, Fumitaka Ohashi¹, Tetsuji Kume¹ (1.Gifu Univ.)

10:00 AM - 10:15 AM

[15a-A202-5] Modeling of BaSi₂ thin film solar cells by 3D-optical simulation

〇Yudai Yamashita¹, Rudi Santbergen², Olindo Isabella², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.TU Delft)

10:15 AM - 10:30 AM

[15a-A202-6] Search for junction-pair materials for n-type BaSi₂ by first-principles calculations

〇Kosuke Hara¹ (1.CCST, Univ. of Yamanashi)

10:30 AM - 10:45 AM

[15a-A202-7] Impact of Ba to Si deposition ratios on the optical properties of As-doped n-BaSi₂ epitaxial films

〇Sho Aonuki¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ.)

10:45 AM - 11:00 AM

[15a-A202-8] Influence of post annealing conditions on optical properties of undoped BaSi₂ films

〇Yurika Haku¹, Takuma Sato¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

Poster presentation

[14p-PB8-1~8] 13.2 Exploratory Materials, Physical Properties, Devices

Sat. Mar 14, 2020 4:00 PM - 6:00 PM PB8 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[14p-PB8-1] Preparation of Silicon Clathrate Thin Film by Vacuum Evaporation

〇SHUNICHIRO ITO¹, TAMIO IIDA¹, FUMITAKA OHASHI², TETSUJI KUME² (1.NIT, Gifu College, 2.Gifu Univ.)

4:00 PM - 6:00 PM

▲ [14p-PB8-2] Marked photoresponsivity enhancement and minority carrier lifetime increase of boron-doped BaSi2 by atomic H passivation

〇(D)Zhihao Xu¹, Kazuhiro Gotoh², Kaoru Toko¹, Noritaka Usami², Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Nagoya Univ.)

4:00 PM - 6:00 PM

[14p-PB8-3] Fabrication of undoped p-BaSi₂/n-Si heterojunction solar cells by post-annealing

Yuki Kimura¹, 〇Takamasa Yoshino¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Nagoya Univ.)

4:00 PM - 6:00 PM

[14p-PB8-4] Investigation of photoresponse in n-Ru₂Si₃/p-Si pn junctions

〇Hiroki Nishi¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

4:00 PM - 6:00 PM

[14p-PB8-5] Employment of Template Layer for Fabrication of Iron Oxide Film on Si Substrate

〇Kenta Yamanaka^1,2, Kenji Yamaguchi^2,1 (1.Ibaraki Univ., 2.QST)

4:00 PM - 6:00 PM

[14p-PB8-6] Local electronic states of hydrogen in the rutile-type MnO₂

〇Hirotaka Okabe¹, Ryosuke Kadono^1,2, Masatoshi Hiraishi¹, Akihiro Koda^1,2, Soshi Takeshita^1,2, Kenji Kojima³, Ichihiro Yamauchi⁴, Hirohiko Sato⁵ (1.KEK-IMSS, 2.SOKENDAI, 3.TRIUMF, 4.Saga Univ., 5.Chuo Univ.)

4:00 PM - 6:00 PM

[14p-PB8-7] Investigation of photoresponsive defect states in electron-irradiated ZnO
by positron annihilation lifetime spectroscopy and electron spin resonance

〇(DC)Makoto Nakajima^1,2, Atsushi Kinomura¹, Atsushi Yabuuchi¹, Kazuo Kuriyama³ (1.KURNS, Kyoto Univ., 2.Graduate School of Engineering, Kyoto Univ., 3.Hosei Univ.)

4:00 PM - 6:00 PM

[14p-PB8-8] Thermal Properties of the Single Crystal of InGaZnO₄

〇Naoki Kase¹, Yuki Kobayashi¹, Yusuke Tanaka¹, Takenori Fujii², Nobuaki Miyakawa¹ (1.Tokyo Univ. of Sci., 2.Univ. of Tokyo)

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[14a-A202-1~8] 13.2 Exploratory Materials, Physical Properties, Devices

[14a-A202-1] Evaluation of crystalline quality of Mg₂Si using high resolution XRD

[14a-A202-2] Carrier lifetime of Mg₂Si pn-junction diode measured by OCVD method

[14a-A202-3] Synthesis of crack-free Mg₂Si crystal by thermal treatment under inert gas atmosphere

[14a-A202-4] Impurity site in the doped Mg₂Si

△ [14a-A202-5] Relationship between electronic states and thermoelectric characteristics in B20-type CoSi film /Si

[14a-A202-6] Growth of Sb-doped n-BaSi₂ films on CaF₂ substrates for thermoelectric characterizations

[14a-A202-7] Investigation of RF sputtering conditions for high-photoresponsivity BaSi₂ films

[14a-A202-8] Growth and characterization of BaSi₂ films sputtered on conductive films

[15a-A202-1~8] 13.2 Exploratory Materials, Physical Properties, Devices

△ [15a-A202-1] Synthesis of MnSi_1.7/Si Nanosheet Bundles by MnCl₂/NH₄Cl treatment of CaSi₂ Powders

△ [15a-A202-2] Synthesis of Mg₂Si Nanosheet Bundles by MgCl₂/Mg Vapor Treatment of CaSi₂ Powders

[15a-A202-3] Thin film growth of CaSi₂ and CaGe₂ by close-spaced evaporation

[15a-A202-4] Synthesis of LiSi_1-xGe_x as a Novel Ternary Compound

[15a-A202-5] Modeling of BaSi₂ thin film solar cells by 3D-optical simulation

[15a-A202-6] Search for junction-pair materials for n-type BaSi₂ by first-principles calculations

[15a-A202-7] Impact of Ba to Si deposition ratios on the optical properties of As-doped n-BaSi₂ epitaxial films

[15a-A202-8] Influence of post annealing conditions on optical properties of undoped BaSi₂ films

[14p-PB8-1~8] 13.2 Exploratory Materials, Physical Properties, Devices

[14p-PB8-1] Preparation of Silicon Clathrate Thin Film by Vacuum Evaporation

▲ [14p-PB8-2] Marked photoresponsivity enhancement and minority carrier lifetime increase of boron-doped BaSi2 by atomic H passivation

[14p-PB8-3] Fabrication of undoped p-BaSi₂/n-Si heterojunction solar cells by post-annealing

[14p-PB8-4] Investigation of photoresponse in n-Ru₂Si₃/p-Si pn junctions

[14p-PB8-5] Employment of Template Layer for Fabrication of Iron Oxide Film on Si Substrate

[14p-PB8-6] Local electronic states of hydrogen in the rutile-type MnO₂

[14p-PB8-7] Investigation of photoresponsive defect states in electron-irradiated ZnO
by positron annihilation lifetime spectroscopy and electron spin resonance

[14p-PB8-8] Thermal Properties of the Single Crystal of InGaZnO₄

Authentication

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[14a-A202-1~8] 13.2 Exploratory Materials, Physical Properties, Devices

△ [14a-A202-5] Relationship between electronic states and thermoelectric characteristics in B20-type CoSi film /Si

[15a-A202-1~8] 13.2 Exploratory Materials, Physical Properties, Devices

△ [15a-A202-1] Synthesis of MnSi1.7/Si Nanosheet Bundles by MnCl2/NH4Cl treatment of CaSi2 Powders

△ [15a-A202-2] Synthesis of Mg2Si Nanosheet Bundles by MgCl2/Mg Vapor Treatment of CaSi2 Powders

[14p-PB8-1~8] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [14p-PB8-2] Marked photoresponsivity enhancement and minority carrier lifetime increase of boron-doped BaSi2 by atomic H passivation

Authentication

△ [15a-A202-1] Synthesis of MnSi_1.7/Si Nanosheet Bundles by MnCl₂/NH₄Cl treatment of CaSi₂ Powders

△ [15a-A202-2] Synthesis of Mg₂Si Nanosheet Bundles by MgCl₂/Mg Vapor Treatment of CaSi₂ Powders